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Kingston HyperX Genesis KHX1600C9D3K4/16GX
(4 x 4 Gb DDR3 SDRAM Kingston 9905403-437.A01LF kit)
[General Module Information]
Module Size: 4096 MBytes
Memory Type: DDR3 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 800.0 MHz (DDR3-1600 / PC3-12800)
Module Manufacturer: Kingston
Module Part Number: 9905403-437.A01LF
Module Revision: 0
SDRAM Manufacturer: SK Hynix
Error Check/Correction: None
[Module characteristics]
Row Address Bits: 15
Column Address Bits: 10
Number Of Banks: 8
Module Density: 2048 Mb
Number Of Ranks: 2
Device Width: 8 bits
Bus Width: 64 bits
Module Nominal Voltage (VDD): 1.5 V
[Module timing]
Minimum SDRAM Cycle Time (tCKmin): 1.500 ns
CAS# Latencies Supported: 6, 7, 8, 9
Minimum CAS# Latency Time (tAAmin): 13.125 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.125 ns
Minimum Row Precharge Time (tRPmin): 13.125 ns
Minimum Active to Precharge Time (tRASmin): 36.000 ns
Supported Module Timing at 666.7 MHz: 9-9-9-24
Supported Module Timing at 600.0 MHz: 8-8-8-22
Supported Module Timing at 533.3 MHz: 7-7-7-20
Supported Module Timing at 466.7 MHz: 7-7-7-17
Supported Module Timing at 400.0 MHz: 6-6-6-15
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Row Active to Row Active Delay (tRRDmin): 6.000 ns
Minimum Active to Active/Refresh Time (tRCmin): 49.125 ns
Minimum Refresh Recovery Time Delay (tRFCmin): 160.000 ns
Minimum Internal Write to Read Command Delay (tWTRmin): 7.500 ns
Minimum Internal Read to Precharge Command Delay (tRTPmin): 7.500 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
[Features]
Partial Array Self Refresh (PASR): Not Supported
On-die Thermal Sensor (ODTS) Readout: Not Supported
Auto Self Refresh (ASR): Supported
Extended Temperature 1X Refresh Rate: Not Supported
Extended Temperature Range: Supported
Module Temperature Sensor: Not Supported
Pseudo Target Row Refresh (pTRR): Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
[Intel Extreme Memory Profile (XMP)]
XMP Revision: 1.2
[Enthusiast / Certified Profile [Enabled]]
Module VDD Voltage Level: 1.65 V
Memory Controller Voltage Level: 1.20 V
CAS# Latencies Supported: 6, 7, 8, 9
Minimum SDRAM Cycle Time (tCKmin): 1.250 ns (800.0 MHz)
Minimum CAS Latency Time (tAAmin): 11.250 ns
Minimum RAS# to CAS# Delay Time (tRCDmin): 11.250 ns
Minimum Row Precharge Delay Time (tRPmin): 11.250 ns
Minimum Active to Precharge Delay Time (tRASmin): 33.750 ns
Minimum CAS Write Latency Time (tCWLmin): 10.000 ns
Minimum Write Recovery Time (tWRmin): 15.000 ns
Minimum Active to Active/Refresh Delay Time (tRCmin): 45.000 ns
Maximum tREFI Time (Average Periodic Refresh Interval): 7.875 us
Minimum Refresh Recovery Delay Time (tRFCmin): 160.000 ns
Minimum Internal Read to Precharge Command Delay Time (tRTPmin): 7.500 ns
Minimum Row Active to Row Active Delay Time (tRRDmin): 6.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 30.0 ns
Minimum Internal Write to Read Command Delay Time (tWTRmin): 7.500 ns
Supported Module Timing at 800.0 MHz: 9-9-9-27
Read to Write CMD Turn-around Time Optimization: No adjustment
Write to Read CMD Turn-around Time Optimization: No adjustment
Back 2 Back CMD Turn-around Time Optimization: No adjustment
System Command Rate Mode: Default |
