Victor_VG
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Manufacturing Description Module Manufacturer: Kingston
Module Part Number: 9905403-437.A01LF
Module Series: ValueRAM
DRAM Manufacturer: Hynix
DRAM Components: H5TQ2G83?FR-H9C
DRAM Die Revision / Process Node: N/A / Not determined
Module Manufacturing Date: Week 42, 2011
Manufacturing Date Decoded: October 17-21, 2011
Module Manufacturing Location: Shanghai, China
Module Revision: 0000h
Physical & Logical Attributes Fundamental Memory Class: DDR3 SDRAM
Module Speed Grade: DDR3-1333H
Module Type: UDIMM (133,35 mm)
Module Capacity: 4 GB
Reference Raw Card: B0 (6 layers)
JEDEC Raw Card Designer: Qimonda
Module Nominal Height: 29 < H <= 30 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: 1 < T <= 2 mm
Number of DIMM Ranks: 2
Address Mapping from Edge Connector to DRAM: Mirrored
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Not specified
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 15 bits
Number of Bank Addresses: 3 bits (8 banks)
DRAM Device Width: 8 bits
Programmed DRAM Density: 2 Gb
Calculated DRAM Density: 2 Gb
Number of DRAM components: 16
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
Supported Voltage Levels: 1.50 V
DRAM Timing Parameters Fine Timebase Dividend: 5
Fine Timebase Divisor: 2
Fine Timebase: 0,0025 ns
Medium Timebase Dividend: 1
Medium Timebase Divisor: 8
Medium Timebase: 0,125 ns
CAS# Latencies Supported (tCL): 6T, 7T, 8T, 9T
Minimum Clock Cycle Time (tCK min): 1,500 ns (666,67 MHz)
CAS# Latency Time (tAA min): 13,125 ns
RAS# to CAS# Delay Time (tRCD min): 13,125 ns
Row Active to Row Active Delay (tRRD min): 6,000 ns
Row Precharge Delay Time (tRP min): 13,125 ns
Active to Precharge Delay Time (tRAS min): 36,000 ns
Act to Act/Refresh Delay Time (tRC min): 49,125 ns
Refresh Recovery Delay Time (tRFC min): 160,000 ns
Write Recovery Time (tWR min): 15,000 ns
Write to Read Command Delay (tWTR min): 7,500 ns
Read to Precharge Command Delay (tRTP min): 7,500 ns
Four Active Windows Delay (tFAW min): 30,000 ns
RZQ / 6 Drive Strength: Supported
RZQ / 7 Drive Strength: Supported
DLL-Off Mode Support: Supported
Thermal Parameters Extended Temperature Range: 0-95 °C
Extended Temperature Refresh Rate: 2X (85-95 °C)
Auto Self Refresh (depending on temperature): Supported
Module Thermal Sensor: Not Incorporated
On-die Thermal Sensor Readout: Not supported
Partial Array Self Refresh: Not supported
Integrated Temperature Sensor Manufacturer: Microchip
Model: MCP98243
Revision: 01h
Temperature Monitor Status: Active
Current Ambient Temperature: 44,500 °C
Sensor Resolution: 0,2500 °C (10-bit ADC)
Accuracy over the active range (75 °C to 95 °C): ±1 °C
Accuracy over the monitoring range (40 °C to 125 °C): ±2 °C
Open-drain Event Output: Disabled
10V of VHV on A0 pin: Supported
Negative Temperature Measurements: Supported
Interrupt capabilities: Supported
SMBus timeout period for TS access: 25 to 35 ms
SPD Protocol SPD Revision: 1.0
SPD Bytes Total: 256
SPD Bytes Used: 176
SPD Checksum: F02Ah (OK)
CRC covers bytes: 0-116
Part number details JEDEC DIMM Label: 4GB 2Rx8 PC3-10600U-9-10-B0
Frequency CAS RCD RP RAS RC RFC RRD WR WTR RTP
667 MHz 9 9 9 24 33 107 4 10 5 5
533 MHz 8 7 7 20 27 86 4 8 4 4
533 MHz 7 7 7 20 27 86 4 8 4 4
400 MHz 6 6 6 15 20 64 3 6 3 3
Intel Extreme Memory Profiles Profiles Revision: 1.2
Profile 1 (Enthusiast) Enabled: Yes
Profile 2 (Extreme) Enabled: No
Profile 1 Channel Config: 1 DIMM/channel
XMP Parameter Profile 1 Profile 2
Speed Grade: DDR3-1600 N/A
DRAM Clock Frequency: 800 MHz N/A
Module VDD Voltage Level: 1,65 V N/A
QPI Bus Voltage Level: 1,20 V N/A
Minimum DRAM Cycle Time (tCK): 1,250 ns N/A
CAS Latencies Supported: 9T,8T,7T,6T N/A
CAS Latency Time (tAA): 9T N/A
CAS Write Latency Time (tCWL): 8T N/A
RAS# to CAS# Delay Time (tRCD): 9T N/A
Row Precharge Delay Time (tRP): 9T N/A
Active to Precharge Delay Time (tRAS): 27T N/A
Active to Active/Refresh Delay Time (tRC): 36T N/A
Refresh Recovery Delay Time (tRFC): 128T N/A
Row Active to Row Active Delay Time (tRRD): 5T N/A
Write Recovery Time (tWR): 12T N/A
Write to Read CMD Delay Time (tWTR): 6T N/A
Read to Precharge CMD Delay (tRTP): 6T N/A
Four Activate Window Delay Time (tFAW): 24T N/A
System CMD Rate Mode: Default N/A
Maximum tREFI Time: 7T N/A
Write to Read CMD Turn-around Time: Default N/A
Read to Write CMD Turn-around Time: Default N/A
Back to Back CMD Turn-around Time: Default N/A
Show delays in nanoseconds
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Жив курилка! (Р. Ролан, "Кола Брюньон")
Xeon E5 2697v2/C602/128 GB PC3-14900L/GTX 1660 Ti, Xeon E5-2697v2/C602J/128 Gb PC3-14900L/GTX 1660 Ti |
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